IndiumV3, Russie, Analysis, bibRecord, 000655

InAs quantum dots in multilayer GaAs-based heterostructures

Identifieur interne : 000655 ( Russie/Analysis ); précédent : 000654; suivant : 000656

InAs quantum dots in multilayer GaAs-based heterostructures

Auteurs : RBID : Pascal:03-0172652

Descripteurs français

Pascal (Inist)
- Epitaxie jet moléculaire, Diffraction RX, Mécanisme formation, Relation ordre, Mouillage, Etude expérimentale, Indium arséniure, Semiconducteur III-V, Point quantique, Multicouche, Composé binaire, Gallium arséniure, Hétérostructure, As In, InAs, As Ga, GaAs, 6110N, 6865H.

English descriptors

KwdEn :
- Binary compounds, Experimental study, Formation mechanism, Gallium arsenides, Heterostructures, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Multilayers, Ordering, Quantum dots, Wetting, XRD.

Abstract

Multilayer GaAs-based heterostructures grown by molecular beam epitaxy are studied by X-ray diffraction, and the mechanisms of formation of InAs quantum dots are discussed. Quantum dots, nearly pyramidal in shape, can be randomly or orderly distributed in the GaAs matrix. Ordering is already present in heterostructures containing as few as three layers of quantum dots. Superlattices of two types, coexisting in the same heterostructure, are formed. One of them is constituted of quantum dots and the other of equally spaced InAs wetting layers.

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Pascal:03-0172652

Le document en format XML

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<author><name sortKey="Pashaev, E M" uniqKey="Pashaev E">E. M. Pashaev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59</s1>
<s2>117333 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>7 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Yakunin, S N" uniqKey="Yakunin S">S. N. Yakunin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59</s1>
<s2>117333 Moscow</s2>
<s3>RUS</s3>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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</affiliation>
</author>
<author><name sortKey="Zaitsev, A A" uniqKey="Zaitsev A">A. A. Zaitsev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Moscow Institute of Radio Engineering, Electronics and Automatics, pr. Vernadskogo 78</s1>
<s2>117334 Moscow</s2>
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<sZ>3 aut.</sZ>
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<country>Russie</country>
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<author><name sortKey="Mokerov, V G" uniqKey="Mokerov V">V. G. Mokerov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Centre of Micro-and Nanoelectronics of IRE, Russian Academy of Sciences, Mokhovaya 11</s1>
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<author><name sortKey="Fedorov, Yu V" uniqKey="Fedorov Y">Yu. V. Fedorov</name>
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<author><name sortKey="Horvath, Zs J" uniqKey="Horvath Z">Zs. J. Horvath</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Research Institute for Technical Physics and Material Science, P.O. Box 49, 525</s1>
<s2>Budapest 114</s2>
<s3>HUN</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
<region nuts="2">Hongrie centrale</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Imamov, R M" uniqKey="Imamov R">R. M. Imamov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59</s1>
<s2>117333 Moscow</s2>
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<country>Russie</country>
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<seriesStmt><idno type="ISSN">0031-8965</idno>
<title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Experimental study</term>
<term>Formation mechanism</term>
<term>Gallium arsenides</term>
<term>Heterostructures</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Multilayers</term>
<term>Ordering</term>
<term>Quantum dots</term>
<term>Wetting</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie jet moléculaire</term>
<term>Diffraction RX</term>
<term>Mécanisme formation</term>
<term>Relation ordre</term>
<term>Mouillage</term>
<term>Etude expérimentale</term>
<term>Indium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Point quantique</term>
<term>Multicouche</term>
<term>Composé binaire</term>
<term>Gallium arséniure</term>
<term>Hétérostructure</term>
<term>As In</term>
<term>InAs</term>
<term>As Ga</term>
<term>GaAs</term>
<term>6110N</term>
<term>6865H</term>
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<front><div type="abstract" xml:lang="en">Multilayer GaAs-based heterostructures grown by molecular beam epitaxy are studied by X-ray diffraction, and the mechanisms of formation of InAs quantum dots are discussed. Quantum dots, nearly pyramidal in shape, can be randomly or orderly distributed in the GaAs matrix. Ordering is already present in heterostructures containing as few as three layers of quantum dots. Superlattices of two types, coexisting in the same heterostructure, are formed. One of them is constituted of quantum dots and the other of equally spaced InAs wetting layers.</div>
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<fC01 i1="01" l="ENG"><s0>Multilayer GaAs-based heterostructures grown by molecular beam epitaxy are studied by X-ray diffraction, and the mechanisms of formation of InAs quantum dots are discussed. Quantum dots, nearly pyramidal in shape, can be randomly or orderly distributed in the GaAs matrix. Ordering is already present in heterostructures containing as few as three layers of quantum dots. Superlattices of two types, coexisting in the same heterostructure, are formed. One of them is constituted of quantum dots and the other of equally spaced InAs wetting layers.</s0>
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InAs quantum dots in multilayer GaAs-based heterostructures

InAs quantum dots in multilayer GaAs-based heterostructures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri